IndiumV3, Russie, Analysis, bibRecord, 001085

Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

Identifieur interne : 001085 ( Russie/Analysis ); précédent : 001084; suivant : 001086

Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

Auteurs : RBID : Pascal:98-0026204

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Multicouche, Point quantique, Semiconducteur III-V, Composé binaire, Gallium arséniure, Composé ternaire, Indium arséniure, Diffraction RX, Réflexion RX, Méthode haute résolution, Anisotropie, Couche autoassemblée, 6865, 8115H, GaAs, As Ga, In0,5Ga0,5As, Ga In As.

English descriptors

KwdEn :
- Anisotropy, Binary compounds, Crystal growth from vapors, Experimental study, Gallium arsenides, High-resolution methods, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Multilayers, Quantum dots, Self-assembled layers, Ternary compounds, X-ray reflection, XRD.

Abstract

Copyright (c) 1997 Elsevier Science S.A. All rights reserved. We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity, multilayers of self-organized InGaAs quantum dots grown on GaAs by MBE. An anisotropy of the average inter-dot spacings in the [100] and [110] directions was found, consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the <100>-directions and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced consistently from the diffraction peak shape and from measurements of the resonant diffuse scattering in the X-ray reflection regime.

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Pascal:98-0026204

Le document en format XML

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<front><div type="abstract" xml:lang="en">Copyright (c) 1997  Elsevier Science S.A. All rights reserved. We have investigated, by means of X-ray diffraction reciprocal space mapping and X-ray reflectivity, multilayers of self-organized InGaAs quantum dots grown on GaAs by MBE. An anisotropy of the average inter-dot spacings in the [100] and [110] directions was found, consistent with an ordering of the dots in a two-dimensional square lattice with main axes along the <100>-directions and a lattice parameter of 55 nm. The nearly perfect vertical alignment (stacking) of the dots was deduced consistently from the diffraction peak shape and from measurements of the resonant diffuse scattering in the X-ray reflection regime.</div>
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Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques

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